Quadrants Triacs. BT134-600 Datasheet

BT134-600 Triacs. Datasheet pdf. Equivalent

BT134-600 Datasheet
Recommendation BT134-600 Datasheet
Part BT134-600
Description 4 Quadrants Triacs
Feature BT134-600;   A  DV                                                               BT134series 4 Quadrants Tria.
Manufacture ADV
Datasheet
Download BT134-600 Datasheet




ADV BT134-600
 
A  DV
                                                              BT134series
4 Quadrants Triacs
General Description
High current density due to mesa technology . the BT134 triac
series is suitable for general purpose AC switching. They can be
used as an ON/OFF function in applications such as static relays,
heating regulation, Rectifier-fed DC inductive loads e.g.DC motors
and solenoids , motor speed controllers.
2.T2
3.Gate
1.T1
Features
Repetitive Peak Off-State Voltage: 600Vand800V
R.M.S On-State Current ( IT(RMS)= 4A )
These Devices are Pb-Free and are RoHS Compliant
2
321
TO-126
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 110°C
Conditions
BT134-600
BT134-800
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Q1-Q2-Q3
Q4
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
4
25/27
3.1
50
10
2
0.5
5
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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ADV BT134-600
 
A  DV
                                                              BT134series
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Non Trigger Gate
Q1-Q2-Q3-Q4
Voltage
Q1-Q2-Q3-Q4 GateTrigger Voltage
Q1-Q2-Q3
Q4
GateTrigger Current
Q1-Q2-Q3-Q4 Holding Current
Q1-Q3-Q4
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Rate of Change of Commutating
Current,
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 125°C
ITM = 5A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 125°C
VD = 12V RL = 33
IT = 0.1A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 125°C
(dI/dt)c=-1.1A/ms
Tj = 125°C
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
BT134-600/800
DE FG
5
1
1.7
Unit
uA
mA
V
0.2 V
1.3 V
5 10 25 50
mA
10 25 70 100
10 25 30 60 mA
15 30 40 60
mA
20 40 60 90
5 10 50 200 V/μs
1 2 5 10 V/μs
3.0 °C/W
100 °C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
RL
VD VD
A
V
RG
Q3(T2-G-)
T2-
A
V
RG
Q4(T2-G+)
 
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ADV BT134-600
 
A  DV
                                                              BT134series
FIG.2: Maximum on-state power dissipation
5
4
3
2
360° Full Cycle
1
0 1234 5
Power Dissipation(W)
FIG.4: Maximum transient thermal impedance
105
FIG.3: Typical RMS on-state current VS
Allowable case Temperature
150
120
90
60
360° Full Cycle
30
0
0
FIG.5:
123
R.M.S On-state Current(A)
4
Rated surge on-state
( Non-Repetitive)
102
5
current
f=60Hz
10 f=50Hz
104
103
102
101
0.1 1 10
Rth(j-c)(°C/W),Transient Thermal Impedance
Tj=25°C Max
1
0 5 10 15 20 25 30 35 40
ITSM(A),Surge On-State Current
FIG.6: Gate trigger current VS Junction
temperature
150
125
100
75
50
25
0
-25
-50
0
50 100 150 200
IGT(Tj)/IGT(25°C) x 100(%)
250
 
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