IRFD9020

www.vishay.com IRFD9020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 19 5.4 11 Single 0.28 HVMDIP S G D S G D P-Channel MOSFET FEATURES Dynamic dV/dt rating Repetitive avalanche rated For automatic insertion End stackable P-channel 175 °C operating temperature Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-Free HVMDIP IRFD9020PbF AB...