2SD2142

Silicon Epitaxial Planar Transistor FEATURES  Darlington connection for a high Hfe  High input impedance Pb APPLICATIONS  General purpose amplifiers. Production specification 2SD2142 ORDERING INFORMATION Type No. Marking 2SD2142 R1M SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 32 VEBO Emitter-Base Voltage 12 IC Collector Current -Continuous 300 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C249 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SD2142 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 - - V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 32 - - V Emitter-base breakdown vo...