2SD596

Production specification Silicon Epitaxial Planar Transistor FEATURES Pb  Micro package Lead-free  Complementary to 2SB624 PNP Transistor  High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) 2SD596 APPLICATIONS  Audio frequency general purpose amplifier applications ORDERING INFORMATION Type No. Marking 2SD596 DV1/DV2/DV3/DV4/DV5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 700 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C024 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor 2SD596 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 Col...