FMMT449

Production specification NPN Silicon Planar Medium Power Transistor FEATURES  Low equivalent on-resistance,RCE(sat): 250mΩ at 1A.  Complementary To FMMT549. Pb Lead-free FMMT449 APPLICATIONS  NPN silicon planar medium power transistor. ORDERING INFORMATION Type No. Marking FMMT449 449 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 ICM Peak Pulse Current 2 IC Collector Current -Continuous 1 IB Base Current 200 Ptot Power Dissipation 500 Tj，Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mA mW ℃ C051 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Planar Medium Power Transistor FMMT449 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter br...