BDY90

BDY90 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND EQUIPMENT SWITCHING INDUSTRIAL DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value V CBO V CEV V CEO V EBO IC I CM IB P tot T stg Tj Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature 120 120 100 6 10 15 2 60 -65 to 175 175 V V V V A A A W o o C C June 1997 1/4 BDY90 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEV Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CBO V CE = V CEV T case = 150 o C V CE = V CEV V EB = 6 V I C = 100 mA Min. Typ. Max. 1 1 3 1 Unit mA mA mA mA V I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain 100 IC = 5 A I C = 10 A IC = 5 A I C = 10 A...