NT5TU32M16CG

NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features 1.8V ± 0.1V Power Supply Voltage Programmable CAS Latency: 3, 4, 5, and 6 Programmable Additive Latency: 0, 1, 2, 3, and 4 Write Latency = Read Latency -1 Programmable Burst Length: 4 and 8 Programmable Sequential / Interleave Burst OCD (Off-Chip Driver Impedance Adjustment) ODT (On-Die Termination) 4 bit prefetch architecture 1k page size for x 4 & x 8, 2k page size for x16 Data-Strobes: Bidirectional, Differential 4 internal memory banks Strong and Weak Strength Data-Output Driver Auto-Refresh and Self-Refresh Power Saving Power-Down modes 7.8 µs max. Average Periodic Refresh Interval Packages: 60 Ball BGA for x4/x8 components 84 Ball BGA for x16 component RoHS Compliance Description The 512Mb Double-Data-Rate-2 (DDR2) DRAMs is a highspeed CMOS Double Data Rate 2 SDRAM containing 536,870,912 bits. It is internally configured as a quad-b...