BF1009

BF 1009 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1009 Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C0 Storage temperature Channel temperature Symbol Value 12 25 10 3 200 -55 ...+150 150 V mW °C Unit V mA VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BF 1009 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 9 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current µA nA µA mA V VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current I DSS I DSO ...