BF1105R

DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors N-channel dual-gate MOS-FETs Product specification BF1105; BF1105R; BF1105WR FEATURES  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz.  Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 APPLICATIONS  VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. handbook, 2 c4olumns 3 1 Top view 2 MSB014 BF1105 marking code: NEp. Fig.1 Simplified outline (SOT143B). handbook, 2 co3lumns 4 2 Top view 1 MSB035 BF1105R marking code: NAp. Fig.2 Simplified outline (SOT143R). alfpage 3 4 2 Top view 1 MSB842 BF1105WR marking code: NA. Fig.3 Simplified outline (SOT343R). QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot yfs Cig1-ss Crss F drain-source voltage drain current total power dissipation forward tr...