BF1107W

DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification Supersedes data of 1998 Jun 22 1999 May 14 Philips Semiconductors Product specification N-channel single gate MOS-FETs FEATURES Currentless RF switch. APPLICATIONS Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver switching. DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. PINNING DESCRIPTION PIN BF1107 1 2 3 drain source gate drain source gate BF1107W Marking code: W3. Marking code: S3p. 1 handbook, halfpage BF1107; BF1107W 3 2 MSB003 Top view Fig.1 Simplified outline SOT23 (BF1107). handbook, halfpage 3 3 1 2 1 Top view 2 MAM062 Fig.2 Simplified outline SOT323 (BF1107W). QUICK REFERENCE DATA SYMBOL S21(on)2 S21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage VGS = 0; ID = 1 mA ID = 20 µA; VDS = 1 V CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-...