DISCRETE SEMICONDUCTORS
DATA SHEET
BF1108; BF1108R Silicon RF switches
Product specification Supersedes data of 1999 Au...
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1108; BF1108R Silicon RF switches
Product specification Supersedes data of 1999 Aug 19 1999 Nov 18
Philips Semiconductors
Product specification
Silicon RF switches
FEATURES Specially designed for low loss RF switching up to 1 GHz. APPLICATIONS Various RF switching applications such as: – Passive loop through for VCR tuner – Transceiver switching. DESCRIPTION These switches are a combination of a depletion type field-effect
transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. PINNING PIN 1 2 3 4 Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA SYMBOL s21(on)2 s21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage CONDITIONS RS = RL = 50 Ω; f ≤ 1 GHz VCS = 0; ID = 1 mA ID = 20 µA; VDS = 1 V CAUTION DESCRIPTION FET gate; diode anode diode cathode source; note 1 drain; note 1
Marking code: NHp. Marking code: NGp. 1 Top view
BF1108; BF1108R
handbook, 2 columns 4
3
2
MSB014
Fig.1 Simplified outline (SOT143B).
handbook, 2 columns 3
4
2 Top view
1
MSB035
Fig.2 Simplified outline (SOT143R).
MIN. − 30 − −...