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TRANSISTOR (NPN)
FEATURES Complimentary to M8550 Collector Current: IC=0.8A
MARKING: Y11
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
Tj Junction Temperature
Tstg Storage Temperature
SOT-23
1.BASE 2.EMITTER 3.COLLECTOR
Value 40 25 5 0.8 0.3 150
-55-150
Units V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
IC= 100µA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
Collector cut-off current
ICBO
VCB=40 V, IE=0
Collector cut-off current
ICEO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
HFE(1) HFE(2)
VCE=1V, IC= 100mA VCE=1V, IC= 800mA
200 40
Collect.