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BF1201R Dataheets PDF



Part Number BF1201R
Manufacturers NXP
Logo NXP
Description N-channel dual-gate PoLo MOS-FETs
Datasheet BF1201R DatasheetBF1201R Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. handbook, 2 columns 4 BF1201; BF1201R; BF1201WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1201R marking code: LBp Fig.2 Simplified outline (SOT143R). 3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation operating junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Mar 29 2 f = 1 MHz f = 400 MHz input level for k = 1% at 40 dB AGC CONDITIONS − − − 23 − − − 105 − MIN. − − − 28 2.6 15 1 − − TYP. MAX. 10 30 200 35 3.1 30 1.8 − 150 UNIT V mA mW mS pF fF dB dBµV °C 1 Top view 2 MSB014 2 Top view 1 MSB842 BF1201 marking code: LAp. BF1201WR marking code: LA Fig.1 Simplified outline (SOT143B). Fig.3 Simplified outline (SOT343R). Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS ID IG1 IG2 Ptot PARAMETER drain-source voltage drain current (DC) gate 1 current gate 2 current total power dissipation BF1201; BF1201R BF1201WR Tstg Tj Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s BF1201; BF1201R BF1201WR PARAMETER thermal resistance from junction to soldering point storage temperature operating junction temperature Ts ≤ 113 °C; note 1 Ts ≤ 109 °C; note 1 − − CONDITIONS − − − − BF1201; BF1201R; BF1201WR MIN. MAX. 10 30 ±10 ±10 200 200 +150 150 V UNIT mA mA mA mW mW °C °C −65 − VALUE 185 155 UNIT K/W K/W handbook, halfpage 250 Ptot (mW) MCD934 200 (2) (1) 150 100 50 0 0 50 100 150 Ts (°C) 200 (1) BF1201WR. (2) BF1201 and BF1201R. Fig.4 Power derating curve. 2000 Mar 29 3 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL V(BR)DSS PARAMETER drain-source breakdown voltage CONDITIONS VG1-S = VG2-S = 0; ID = 10 µA VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA VG2-S = VDS = 0; IS-G1 = 10 mA VG1-S = VDS = 0; IS-G2 = 10 mA VG2-S = 4 V; VDS = 5 V; ID = 100 µA VG1-S = VDS = 5 V; ID = 100 µA BF1201; BF1201R; BF1201WR MIN. 10 6 6 0.5 0.5 0.3 0.3 11 − − MAX. − − − 1.5 1.5 1.0 1.2 19 50 20 UNIT V V V V V V V mA nA nA V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note 1. RG1 connects G1 to VGG = 5 V. forward source-gate 1 voltage forward source-gate 2 voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate 1 cut-off current gate 2 cut-off current VG2-S = 4 V; VDS = 5 V; RG1 = 62 kΩ; note 1 VG2-S = VDS = 0; VG1-S = 5 V VG1-S = VDS = 0; VG2-S = 4 V DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified. SYMBOL yfs Cig1-ss Cig2-ss Coss Crss F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 output capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 10.7 MHz; GS = 20 mS; BS = 0 f = 400 MHz; YS = YS opt f = 800 MHz; YS = YS opt Gtr power gain f = 200 MHz; GS = 2 mS; BS = BS opt; GL = 0.5 mS; BL = BL opt; f = 400 MHz; GS = 2 mS; BS = BS opt; GL = 1 mS; BL = BL opt; f = 800 MHz; GS = 3.3 mS; BS = BS opt; GL = 1 mS; BL = BL opt; Xmod cross-modulation input level for k = 1%; fw = 50 MHz; funw = 60 MHz; note 1 at 0 dB AGC at 10 dB AGC at 40 dB AGC Note 1. Measured in Fig.21 test circuit. 90 − 105 − 95 − − − − dBµV dBµV dBµV CONDITIONS pulsed; Tj = 25 °C MIN. 23 − − − − − − − − − − TYP. 28 2.6 1.1 0.9 15 5 1 1.9 33.5 29 24 MAX..


BF1201 BF1201R BF1201WR


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