DatasheetsPDF.com

MMBT5551 Dataheets PDF



Part Number MMBT5551
Manufacturers Formosa MS
Logo Formosa MS
Description NPN Transistor
Datasheet MMBT5551 DatasheetMMBT5551 Datasheet (PDF)

SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. EMITTER - 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 180 1.

  MMBT5551   MMBT5551


Document
SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching MARKING: G1 SOT-23 1. BASE 2. EMITTER - 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 0.6 300 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure *Pulse test V(BR)C.


MMBT5550 MMBT5551 MMBT5550LT1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)