Document
SOT-23 Plastic-Encapsulate Transistors
MMBT5551 TRANSISTOR (NPN)
Formosa MS
FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching
MARKING: G1
SOT-23
1. BASE 2. EMITTER - 3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 180 160
6 0.6 300 150 -55-150
Units V V V A
mW
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter
breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure *Pulse test
V(BR)C.