BF1203

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES Two low noise gain controlled amplifiers in a single package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment. handbook, halfpage BF1203 PINNING - SOT363 PIN 1 2 3 4 5 6 gate 1 (a) gate 2 drain (a) drain (b) source gate 1 (b) DESCRIPTION g1 (b) 4 s d (b) 6 5 DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT363 micro-miniature plastic package. AMP a AMP b 1 2 3 g1 (a) g2 d (a) MBL254 Top view Marking code: L2- Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − − amp. a: ID = 15 mA amp. b: ID = 12 mA Cig1-s Crss NF Xmod input c...