Document
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellecnt hFE Linearity
: hFE(2)=25Min. : VCE=6V, IC=400mA. ᴌ1 Watt Amplifier Application. ᴌComplementary to KTA1021.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING 35 30 5 500 -500 400 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
J K
D
KTC1020
EPITAXIAL PLANAR NPN TRANSISTOR
B
F A
HM
C
EE
1 2 3N L
1. EMITTER 2. COLLECTOR 3. BASE
G
O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27
F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45
L 25 M 0.80 N 0.55 MAX
O 0.75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitte.