MMBTA06

Production specification NPN General Purpose Transistor FEATURES  High breakdown voltage.  Complementary PNP type available Pb Lead-free (MMBTA55/MMBTA56).  Low collector-emitter saturation voltage. APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA05 MMBTA06 1H 1GM MMBTA05/MMBTA06 SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO collector-base voltage collector-emitter voltage MMBTA05 MMBTA06 MMBTA05 MMBTA06 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value 60 80 60 80 4 0.5 350 357 -55 to +150 UNIT V V V A mW °C/W °C C119 Rev.B www.gmesemi.com 1 Production specification NPN General Purpose Transistor MMBTA05/MMBTA06 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter ...