MMBTA13

Production specification NPN Darlington Amplifier Transistor FEATURES  Epitaxial planar die construction.  Complementary PNP type available Pb Lead-free (MMBTA63/MMBTA64).  High current gain.  MSL 1 APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA13 MMBTA14 K2D K3D MMBTA13/MMBTA14 SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-base voltage MMBTA13 MMBTA14 VCEO collector-emitter voltage MMBTA13 MMBTA14 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value 30 30 30 30 10 0.3 0.3 417 -55 to +150 UNIT V V V A W °C/W °C C121 Rev.A www.gmesemi.com 1 Production specification NPN Darlington Amplifier Transistor MMBTA13/MMBTA14 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symb...