Production specification
NPN Darlington Amplifier Transistor
FEATURES
Epitaxial planar die construction. Complemen...
Production specification
NPN Darlington Amplifier
Transistor
FEATURES
Epitaxial planar die construction. Complementary
PNP type available
Pb
Lead-free
(MMBTA63/MMBTA64).
High current gain.
MSL 1
APPLICATIONS
Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMBTA13 MMBTA14
K2D K3D
MMBTA13/MMBTA14
SOT-23 Package Code
SOT-23 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VCBO
collector-base voltage
MMBTA13 MMBTA14
VCEO
collector-emitter voltage
MMBTA13 MMBTA14
VEBO
emitter-base voltage
IC collector current (DC)
PC Collector dissipation
RθJA Thermal Resistance, Junction to Ambient
Tj ,Tstg
junction and storage temperature
Value 30 30 30 30 10
0.3
0.3
417
-55 to +150
UNIT V
V V A W °C/W °C
C121 Rev.A
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Production specification
NPN Darlington Amplifier
Transistor MMBTA13/MMBTA14
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symb...