MMBTA63

Production specification PNP Darlington Amplifier Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBTA13/MMBTA14).  High current gain. Pb Lead-free MMBTA63/MMBTA64 APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA63 MMBTA64 2U 2V SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-base voltage MMBTA63 MMBTA64 VCEO collector-emitter voltage MMBTA63 MMBTA64 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value -30 -30 -30 -30 -10 -0.5 0.3 417 -55 to +150 UNIT V V V A W °C/W °C C124 Rev.A www.gmesemi.com 1 Production specification PNP Darlington Amplifier Transistor MMBTA63/MMBTA64 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Param...