Production specification
PNP Darlington Amplifier Transistor
FEATURES
Epitaxial planar die construction. Complemen...
Production specification
PNP Darlington Amplifier
Transistor
FEATURES
Epitaxial planar die construction. Complementary
NPN type available
(MMBTA13/MMBTA14). High current gain.
Pb
Lead-free
MMBTA63/MMBTA64
APPLICATIONS
Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMBTA63 MMBTA64
2U 2V
SOT-23
Package Code SOT-23 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VCBO
collector-base voltage
MMBTA63 MMBTA64
VCEO
collector-emitter voltage
MMBTA63 MMBTA64
VEBO
emitter-base voltage
IC collector current (DC)
PC Collector dissipation
RθJA Thermal Resistance, Junction to Ambient
Tj ,Tstg
junction and storage temperature
Value -30 -30 -30 -30 -10
-0.5
0.3
417
-55 to +150
UNIT V
V V A W °C/W °C
C124 Rev.A
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Production specification
PNP Darlington Amplifier
Transistor MMBTA63/MMBTA64
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Param...