S8550

Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= -500mA).  Complementary To S8050.  Excellent HFE Linearity. Pb Lead-free APPLICATIONS  High Collector Current. ORDERING INFORMATION Type No. Marking S8550 2TY Production specification S8550 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -500 PC Collector Dissipation 300 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C080 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxial Planar Transistor S8550 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IC=-1...