Silicon Epitaxial Planar Transistor
FEATURES
Complementary To S9015. Excellent HFE Linearity. Power dissipation.(...
Silicon Epitaxial Planar
Transistor
FEATURES
Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W)
Pb
Lead-free
APPLICATIONS
Per-Amplifier low level & low noise.
ORDERING INFORMATION
Type No.
Marking
S9014
J6
Production specification
S9014
SOT-23 Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC PC Tj,Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature
50 45 5 100 200 -55 to +150
Units V V V mA mW ℃
C083 Rev.A
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1
Production specification
Silicon Epitaxial Planar
Transistor
S9014
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
45
V
Emitter-base b...
