MMST2907A

PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW) Pb  Epitaxial planar die construction. Lead-free  Complementary NPN type MMST2222A. APPLICATIONS  General purpose application. Production specification MMST2907A ORDERING INFORMATION Type No. Marking MMST2907A K3F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -600 PC Collector Dissipation 200 RθJA Thermal Resistance,Junction to Ambient 625 Units V V V mA mW ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ F050 Rev.A www.gmesemi.com 1 Production specification PNP Silicon Epitaxial Planar Transistor MMST2907A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage ...