Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.(PC=200mW). Epitaxial ...
Production specification
PNP Silicon Epitaxial Planar
Transistor
FEATURES
Power dissipation.(PC=200mW). Epitaxial planar die construction. Also available in lead free version.
Pb
Lead-free
MMSTA55/MMSTA56
APPLICATIONS
General purpose application and switching application.
ORDERING INFORMATION
Type No.
Marking
MMSTA55 MMSTA56
K2H K2G
SOT-323
Package Code SOT-323 SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
MMSTA55 MMSTA56
MMSTA55 MMSTA56 MMSTA55 MMSTA56
-60 -80 -60 -80
-4
IC
Collector Current -Continuous
-500
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
F063 Rev.A
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Production specification
PNP Silicon Epitaxial Planar
Transistor MMSTA55/MMSTA56
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions...