PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitt...
PNP Silicon AF
Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated
transistor
with good matching in one package
BC856S / U, BC857S: For orientation in reel see package information below
Pb-free (RoHS compliant) package Qualified according AEC Q101
BC856S/U_BC857S
BC856S/U BC857S
C1 B2 E2 654
TR2 TR1
123 E1 B1 C2
EHA07175
Type BC856S BC856U BC857S
Marking
Pin Configuration
Package
3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
3Cs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1 2011-07-25
BC856S/U_BC857S
Maximum Ratings Parameter Collector-emitter voltage BC856S/U BC857S
Symbol VCEO
Value
65 45
Collector-base voltage BC856S, BC856U BC857S
VCBO
80 50
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms Total power dissipationTS ≤ 115 °C, BC856S TS ≤ 118 °C, BC856U, BC857U Junction temperatur...