MMDT3906

Elektronische Bauelemente MMDT3906 PNP Silicon Multi-Chip Transistor * Features RoHS Compliant Product $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH Power dissipation. PCM : 0.2 W (Tamp.=25OC) Collector current ICM : - 0.2 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K3N or A2 SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35 .045(1.15 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅ Parameter Symbol Test conditions MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturatio...