MMDT3906

MULTI-CHIP TRANSISTORS PNP Silicon MMDT3906 FEATURES  ULTRA-SMALL SURFACE MOUNT PACKAGE  EPITAXIAL PLANAR DIE CONSTRUCTION  IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING  ALSO AVAILABLE IN LEAD FREE VERSION  PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA  CASE：SOT-363  TERMINALS：SOLDERABLE PER MIL-STD-202G, METHOD 208  APPROX. WEIGHT:0.006 GRAM  Halogen Free:MMDT3906-H . CASE：SOT-363 DIMENSIONS IN MILLIMETERS AND (INCHES) MAXIMUM RATINGS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED. PATING SYMBOL COLLECTOR − EMITTER VOLTAGE VCEO COLLECTOR − BASE VOLTAGE EMITTER − BASE VOLTAGE COLLECTOR CURRENT − CONTINUOUS VCBO VEBO IC COLLECTOR DISSIPATION @ TA = 25°C PC OPERATING AND STORAGE JUNCTION TEMPERATURE RANGE TJ;TSTG NOTE:1.Indicates Data in addition to JEDEC Requirements. 32 1 MMDT3906 -40 -40 -5 -200 150 - 55 TO +150 UNITS V V V mA mW ℃ 4...