Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BF245A; BF245B; BF245C N-channel silicon field-effect transistors
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
FEATURES • Interchangeability of drain and source connections • Frequencies up to 700 MHz. APPLICATIONS • LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C Ptot yfs Crs total power dissipation forward transfer admittance reverse transfer capacitance Tamb = 75 °C VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 °C VDS = 20 V; VGS = −1 V; f = 1 MHz; Tamb = 25 °C ID = 10 nA; VDS = 15 V open drain VDS = 15 V; VGS = 0 CONDITIONS Fig.1 PINNING PIN 1 2 3
BF245A; BF245B; BF245C
SYMBOL d s g drain source gate
DESCRIPTION
handbook, halfpage 2
1
3 g
MAM257
d s
Simplified outline (TO-92 variant) and symbol.
MIN. − −0.25 − 2 6 12 − 3 − − − − − − − − −
TYP.
MAX. ±30 −8 −30 6.5 15 25 300 6.5 −
UNIT V V V mA mA mA mW mS pF
1.1
1996 Jul 30
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGDO VGSO ID IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-drain voltage gate-source voltage drain current gate current total power dissipation storage temperature operating junction temperature up to Tamb = 75 °C; open source open drain
BF245A; BF245B; BF245C
CONDITIONS − − − − − − − up to Tamb = 90 °C; note 1
MIN.
MAX. ±30 −30 −30 25 10 300 300 +150 150 V V V
UNIT
mA mA mW mW °C °C
−65 −
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm × 10 mm. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient thermal resistance from junction to ambient STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff VGS PARAMETER gate-source breakdown voltage gate-source cut-off voltage gate-source voltage BF245A BF245B BF245C IDSS drain current BF245A BF245B BF245C IGSS gate cut-off current VGS = −20 V; VDS = 0 VGS = −20 V; VDS = 0; Tj = 125 °C Note 1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02. VDS = 15 V; VGS = 0; note 1 2 6 12 − − 6.5 15 25 −5 −0.5 mA mA mA nA µA CONDITIONS IG = −1 µA; VDS = 0 ID = 10 nA; VDS = 15 V ID = 200 µA; VDS = 15 V −0.4 −1.6 −3.2 −2.2 −3.8 −7.5 V V V MIN. −30 −0.25 − −8.0 MAX. V V UNIT CONDITIONS in free air VALUE 250 200 UNIT K/W K/W
1996 Jul 30
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; unless otherwise specified. SYMBOL Cis Crs Cos gis gos yfs yrs yos fgfs F PARAMETER input capacitance reverse transfer capacitance output capacitance input conductance output conductance forward transfer admittance reverse transfer admittance output admittance cut-off frequency noise figure CONDITIONS
BF245A; BF245B; BF245C
MIN. − − − − − 3 − − − − −
TYP. MAX. 4 1.1 1.6 250 40 − 6 1.4 25 700 1.5 − − − − − 6.5 − − − − −
UNIT pF pF pF µS µS mS mS mS µS MHz dB
VDS = 20 V; VGS = −1 V; f = 1 MHz VDS = 20 V; VGS = −1 V; f = 1 MHz VDS = 20 V; VGS = −1 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 200 MHz VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0; gfs = 0.7 of its value at 1 kHz VDS = 15 V; VGS = 0; f = 100 MHz; RG = 1 kΩ (common source); input tuned to minimum noise
handbook, halfpage
−10
MGE785
handbook, halfpage
6
MGE789
IGSS (nA) −1
ID
(mA) 5
4
typ
−10−1
3
2
−10−2
1
−10−3
0
50
100
Tj (°C)
150
0 −4
−2
VGS (V)
0
VDS = 0; VGS = −20 V.
VDS = 15 V; Tj = 25 °C.
Fig.2
Gate leakage current as a function of junction temperature; typical values.
Fig.3
Transfer characteristics for BF245A; typical values.
1996 Jul 30
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
handbook, halfpage
6
MBH555
ID (mA) 5
handbook, halfpage
15
MGE787
ID (mA) VGS = 0 V 10
4
3 −0.5 V 2 5
1
−1 V −1.5 V
0
0
10
VDS (V)
20
0 −4
−2
VGS (V)
0
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.4
Output characteristics for BF245A; typical values.
Fig.5
Transfer characteristics for BF245B; typical values.
handbook, halfpage
15
MBH553
handbook, halfpage
30
MGE788
ID (mA) 10 VGS = 0 V
ID (mA) 20
−0.5 V −1 V 5 −1.5 V −2 V −2.5 V.