BF256A

BF256A/BF256B/BF256C BF256A/BF256B/BF256C N-Channel RF Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50. 1 TO-92 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VDG VGS IGF PD TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation @TA=25°C Derate above 25°C Operating and storage Temperature Range Value 30 -30 10 350 2.8 - 55 ~ 150 Units V V mA mW mW/°C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition VDS = 0, IG = 1µA VDS = 15V, ID = 200µA VDS = 15V, ID = 10nA VGS = -20V, VGS = 0 Min. -30 -0.5 -0.5 -7.5 -8 -5 Max. Units V V V nA Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VGS VGS(off) IGSS Gate-Source Gate-Source Cutoff Voltage Gate Reverse Current On Characteristics IDSS Zero-Gate Voltage Drain Current BF256A BF256B BF256C Small Signal Characteristics gfs Common Source Forward Transconductance VGS = 15V, VGS = 0 3 6 11 4.5 7 13 18 mA VDS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 BF256A/BF256B/BF256C Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 TRADEMARKS The following are registe...