BF256B

BF256B — N-Channel RF Amplifiers November 2014 BF256B N-Channel RF Amplifiers Features This device is designed for VHF / UHF amplifiers Sourced from process 50 1 TO-92 1. Gate 2. Source 3. Drain Ordering Information Part Number BF256B Top Mark BF256B Package TO-92 3L Packing Method Bulk Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Temperature Range 30 -30 10 -55 to 150 V V mA °C Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter PD Total Device Dissipation at TA = 25°C Derate Above 25°C Value 350 2.8 Unit mW mW/°C © 2003 Fairchild Semiconductor Corporation BF256B Rev. 1.1.0 www.fairchildsemi.com BF256B — N-Channel RF Amplifiers Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter V(BR)GSS VGS VGS(off) IGSS IDSS gfs Gate-Source Breakdown Voltage Gate-Source Voltage Gate-Source Cut-Off Voltage Gate Reverse Current Zero-Gate Vol...