BF257 BF258-BF259
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN ...
BF257 BF258-BF259
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V E BO IC I CM Pt o t T stg Tj October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current Total Power Dissipation at T amb ≤ 50 °C Storage Temperature Junction Temperature 160 160 Value BF 257 BF258 BF25 9 250 250 5 100 200 5 – 55 to 200 200 300 300 V V V mA mA W °C °C 1/5 Unit
BF257-BF258-BF259
THERMAL DATA
R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 30 175 °C/W °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol I CB O Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emittter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage DC Current Gain Transition Frequency Reverse Capacitance Test Conditions for BF257 for BF258 for BF259 I C = 100 µA V CB = 100 V V CB = 200 V V CB = 250 V for BF257 for BF258 for BF259 for BF257 for BF258 for BF259 160 250 300 160 250 300 5 Min. Typ. Max. 50 50 50 Unit nA nA...