Voltage Transistors. BF420 Datasheet

BF420 Transistors. Datasheet pdf. Equivalent

Part BF420
Description High Voltage Transistors
Feature MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF420/D High Voltage Transistors NPN.
Manufacture Motorola Inc
Datasheet
Download BF420 Datasheet



BF420
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF420/D
High Voltage Transistors
NPN Silicon
COLLECTOR
2
3
BASE
BF420
BF422
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol BF420 BF422 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
300 250
300 250
5.0
500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
BF420
BF422
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BF420
BF422
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
BF420
BF422
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
BF420
BF422
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
BF420
BF422
IEBO
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Min Max Unit
Vdc
300 —
250 —
Vdc
300 —
250 —
Vdc
5.0 —
5.0 —
µAdc
— 0.01
——
nAdc
— 100
——
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1



BF420
BF420 BF422
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
BF420
BF422
hFE —
50 —
50 —
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
Vdc
0.5
Vdc
2.0
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
fT MHz
60 —
Cre pF
— 1.6
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data







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