Silicon Transistors. BF420 Datasheet

BF420 Transistors. Datasheet pdf. Equivalent

Part BF420
Description NPN Silicon Transistors
Feature NPN Silicon Transistors With High Reverse Voltage High breakdown voltage q Low collector-emitter sat.
Manufacture Siemens Semiconductor Group
Datasheet
Download BF420 Datasheet



BF420
NPN Silicon Transistors
With High Reverse Voltage
q High breakdown voltage
q Low collector-emitter saturation voltage
q Low capacitance
q Complementary types: BF 421, BF 423 (PNP)
BF 420
BF 422
2
3
1
Type
BF 420
BF 422
Marking
Ordering Code
Q62702-F531
Q62702-F495
Pin Configuration
123
ECB
Package1)
TO-92
Maximum Ratings
Parameter
Symbol Values
BF 420
Collector-emitter voltage
VCE0
Collector-emitter voltage
RBE = 2.7 k
VCER
Collector-base voltage
VCB0
Emitter-base voltage
VEB0
Collector current
IC
Peak base current
IBM
Total power dissipation, TC = 88 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
300
300
BF 422
250
250
5
50
100
830
150
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case2)
Rth JA
Rth JC
150
75
Unit
V
mA
mW
˚C
K/W
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91



BF420
BF 420
BF 422
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
BF 422
Collector-emitter breakdown voltage
IC = 10 µA, RBE = 2.7 k
BF 420
Collector-base breakdown voltage
IC = 10 µA
BF 420
BF 422
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 200 V
Collector cutoff current
VCE = 200 V, RBE = 2.7 k, TA = 150 ˚C
Emitter cutoff current, VEB = 5 V
DC current gain
IC = 100 µA, VCE = 20 V
IC = 25 mA, VCE = 20 V
Collector-emitter saturation voltage1)
IC = 25 mA, Tj =150 ˚C
AC characteristics
Transition frequency
IC = 10 mA, VCE = 10 V, f = 20 MHz
Output capacitance
VCB = 30 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 250
V(BR)CER 300
V(BR)CB0
V(BR)EB0
ICB0
300
250
5
ICER
IEB0
hFE
VCEsatRF
15
50
–V
10 nA
10 µA
10
20 V
fT
Cobo
100 –
0.8 –
MHz
pF
1) Pulse test: t 300 µs, D 2 %.
Semiconductor Group
2







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