Signal Transistors. BF420 Datasheet

BF420 Transistors. Datasheet pdf. Equivalent

Part BF420
Description Small Signal Transistors
Feature BF420, BF422 Small Signal Transistors (NPN) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) .
Manufacture General Semiconductor
Datasheet
Download BF420 Datasheet




BF420
TO-92
.181 (4.6)
BF420, BF422
Small Signal Transistors (NPN)
.142 (3.6)
FEATURES
NPN Silicon Epitaxial Planar Transistors
especially suited for application in class-B
video output stages of TV receivers and
monitors.
As complementary types, the PNP
transistors BF421 and BF423 are
recommended
max..022 (0.55)
.098 (2.5)
EB
C
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Power Dissipation at Tamb = 25 °C
BF420
BF422
BF422
BF420
VCBO
VCBO
VCEO
VCER
VEBO
IC
ICM
Ptot
300
250
250
300
5
50
100
8301)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
V
V
V
V
V
mA
mA
mW
°C
°C
4/98



BF420
BF420, BF422
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Collector-Base Breakdown Voltage
at IC = 100 µA, IB = 0
BF420
BF422
Collector-Emitter Breakdown Voltage BF422
at IC = 10 mA, IE = 0
Collector-Emitter Breakdown Voltage BF420
at RBE = 2.7 k, IC = 10 mA
Emitter-Base Breakdown Voltage
at IE = 100 µA, IB = 0
Collector-Base Cutoff Current
at VCB = 200 V, IE = 0
Collector-Emitter Cutoff Current
at RBE = 2.7 k, VCE = 250 V
at RBE = 2.7 k, VCE = 200 V, Tj = 150 °C
Collector Saturation Voltage
at IC = 30 mA, IB = 5 mA
V(BR)CBO
V(BR)CBO
V(BR)CEO
V(BR)CER
V(BR)EBO
ICBO
ICER
ICER
VCEsat
300
250
250
300
5
10
50
10
0.6
DC Current Gain
at VCE = 20 V, IC = 25 mA
hFE 50 –
Gain-Bandwidth Product
at VCE = 10 V, IC = 10 mA
fT
60 –
Feedback Capacitance
at VCE = 30 V, IC = 0, f = 1 MHz
Cre – – 1.6
Thermal Resistance Junction to Ambient Air
RthJA
1501)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
V
V
V
V
V
nA
nA
µA
V
MHz
pF
K/W







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