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BF421 Dataheets PDF



Part Number BF421
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon Transistors
Datasheet BF421 DatasheetBF421 Datasheet (PDF)

PNP Silicon Transistors With High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BF 420, BF 422 (NPN) q 2 3 1 BF 421 BF 423 Type BF 421 BF 423 Marking – Ordering Code Q62702-F532 Q62702-F496 Pin Configuration 1 2 3 E C B Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE = 2.7 k Collector-base voltage Emitter-base voltage Collector current Peak base current Junction t.

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PNP Silicon Transistors With High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BF 420, BF 422 (NPN) q 2 3 1 BF 421 BF 423 Type BF 421 BF 423 Marking – Ordering Code Q62702-F532 Q62702-F496 Pin Configuration 1 2 3 E C B Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE = 2.7 k Collector-base voltage Emitter-base voltage Collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCER VCB0 VEB0 IC IBM Tj Tstg Values BF 421 – 300 300 Unit BF 423 250 – 250 5 50 100 830 150 – 65 … + 150 mW ˚C mA V Total power dissipation, TC = 88 ˚C Ptot 150 75 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BF 421 BF 423 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BF 423 Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 k BF 421 Collector-base breakdown voltage IC = 10 µA BF 421 BF 423 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 200 V Collector cutoff current VCE = 200 V, RBE = 2.7 kΩ , TA = 150 ˚C Emitter cutoff current, VEB = 5 V DC current gain IC = 100 µA, VCE = 20 V IC = 25 mA, VCE = 20 V Collector-emitter saturation voltage1) IC = 25 mA, Tj =150 ˚C AC characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Output capacitance VCB = 30 V, f = 1 MHz fT Cobo – – 100 0.8 – – MHz pF V(BR)CE0 V(BR)CER V(BR)CB0 300 250 V(BR)EB0 ICB0 ICER IEB0 hFE 15 50 VCEsatRF – – – – – – 20 V 5 – – – – – – – – – – – – 10 10 10 – nA µA Values typ. max. Unit 250 300 – – – – V 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 BF 421 BF 423 Total power dissipation Ptot = f (TA; TC) Collector current IC = f (VBE) VCE = 20 V, TA = 25 ˚C Permissible pulse load RthJA = f (tp) Collector cutoff current ICB0 = f (TA) VCB = 200 V Semiconductor Group 3 BF 421 BF 423 DC current gain hFE = f (IC) VCE = 20 V, TA = 25 ˚C Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz Output capacitance Cobo = f (VCB) IC = 0, f = 1 MHz Semiconductor Group 4 .



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