BF422L

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF422L NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES Low current (max. 50 mA) High voltage (max. 300 V). APPLICATIONS Telephony. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: BF421L and BF423L. PINNING PIN 1 2 3 base collector emitter BF422L DESCRIPTION 1 handbook, halfpage 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 250 250 5 50 100 50 625 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 21 2 Philips Semiconductors Product specification NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cre fT Note 1. Pulse test:...