high-voltage transistors. BF459 Datasheet

BF459 transistors. Datasheet pdf. Equivalent

BF459 Datasheet
Recommendation BF459 Datasheet
Part BF459
Description NPN high-voltage transistors
Feature BF459; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF458; BF459 NPN high-voltage transistor.
Manufacture NXP
Datasheet
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NXP BF459
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF458; BF459
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 06
1999 Apr 21



NXP BF459
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF458; BF459
FEATURES
Low current (max. 100 mA)
High voltage (max. 300 V).
APPLICATIONS
Intended for video output stages in black-and-white and
in colour television receivers.
DESCRIPTION
NPN transistors in a TO-126; SOT32 plastic package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to mounting base
base
handbook, halfpage
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF458
BF459
collector-emitter voltage
BF458
BF459
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb 90 °C
MIN. MAX. UNIT
250 V
300 V
250 V
300 V
5V
100 mA
300 mA
100 mA
6W
65 +150 °C
150 °C
65 +150 °C
1999 Apr 21
2



NXP BF459
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF458; BF459
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
104
10
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BF458
ICBO
collector cut-off current
BF459
IEBO
hFE
VCEsat
Cc
Cre
fT
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
− − 50 nA
− − 5 µA
IE = 0; VCB = 250 V
IE = 0; VCB = 250 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 30 mA; VCE = 10 V
IC = 30 mA; IB = 6 mA
−−
−−
−−
26
−−
50 nA
5 µA
100 nA
1V
IE = ie = 0; VCB = 30 V; f = 1 MHz
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 100 MHz
4.5 pF
3.5 pF
90
MHz
1999 Apr 21
3





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