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SGI02N120 Dataheets PDF



Part Number SGI02N120
Manufacturers Infineon
Logo Infineon
Description Fast IGBT in NPT-technology
Datasheet SGI02N120 DatasheetSGI02N120 Datasheet (PDF)

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E • Qualified according to JEDEC1 for target applications PG-TO-252-3-11 (D-PAK) PG-TO-220-3-1 • Pb-free lead plating; RoHS compliant • Complete produ.

  SGI02N120   SGI02N120



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SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E • Qualified according to JEDEC1 for target applications PG-TO-252-3-11 (D-PAK) PG-TO-220-3-1 • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ PG-TO-262-3-1 (I²-PAK) Type SGP02N120 SGD02N120 SGI02N120 VCE IC Eoff Tj Marking Package 1200V 2A 0.11mJ 150°C GP02N120 PG-TO-220-3-1 1200V 2A 0.11mJ 150°C 02N120 PG-TO-252-3-11 1200V 2A 0.11mJ 150°C GI02N120 PG-TO-262-3-1 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 12.


BYX65-400 SGI02N120 IXTY90N055T2


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