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BF470 Dataheets PDF



Part Number BF470
Manufacturers NXP
Logo NXP
Description PNP high-voltage transistors
Datasheet BF470 DatasheetBF470 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF470; BF472 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES • Low feedback capacitance. handbook, halfpage BF470; BF472 APPLICATIONS • Class-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION PNP transistors in a TO-1.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF470; BF472 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES • Low feedback capacitance. handbook, halfpage BF470; BF472 APPLICATIONS • Class-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION PNP transistors in a TO-126; SOT32 plastic package. NPN complements: BF469 and BF471. 1 2 3 Top view 2 3 1 MAM272 PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF470 BF472 VCEO collector-emitter voltage BF470 BF472 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb ≤ 114 °C IC = −25 mA; VCE = −20 V IC = ic = 0; VCE = −30 V; f = 1 MHz IC = −10 mA; VCE = −10 V; f = 100 MHz open base − − − − 50 − 60 −250 −300 −100 1.8 − 1.8 − pF MHz V V mA W open emitter − − −250 −300 V V CONDITIONS MIN. MAX. UNIT 1996 Dec 09 2 Philips Semiconductors Product specification PNP high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF470 BF472 VCEO collector-emitter voltage BF470 BF472 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 114 °C open collector open base − − − − − − − PARAMETER collector-base voltage open emitter − − CONDITIONS BF470; BF472 MIN. MAX. −250 −300 −250 −300 −5 −50 −100 −50 1.8 +150 150 +150 UNIT V V V V V mA mA mA W °C °C °C −65 − −65 THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead minimum 10 × 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain feedback capacitance transition frequency CONDITIONS IE = 0; VCB = −200 V IE = 0; VCB = −200 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −25 mA; VCE = −20 V IC = ic = 0; VCE = −30 V; f = 1 MHz − − − 50 − − MIN. MAX. −10 −10 −50 − −600 1.8 − mV pF MHz UNIT nA µA nA PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air; note 1 VALUE 100 20 UNIT K/W K/W collector-emitter saturation voltage IC = −30 mA; IB = −5 mA IC = −10 mA; VCE = −10 V; f = 100 MHz 60 1996 Dec 09 3 Philips Semiconductors Product specification PNP high-voltage transistors PACKAGE OUTLINE BF470; BF472 handbook, full pagewidth 2.7 max 7.8 max 3.75 3.2 3.0 11.1 max 2.54 max (1) 1.2 15.3 min 1 0.


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