Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF470; BF472 PNP high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09
Philips Semiconductors
Product specification
PNP high-voltage transistors
FEATURES • Low feedback capacitance.
handbook, halfpage
BF470; BF472
APPLICATIONS • Class-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION PNP transistors in a TO-126; SOT32 plastic package. NPN complements: BF469 and BF471.
1 2 3 Top view
2 3 1
MAM272
PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION Fig.1 Simplified outline (TO-126; SOT32) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF470 BF472 VCEO collector-emitter voltage BF470 BF472 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb ≤ 114 °C IC = −25 mA; VCE = −20 V IC = ic = 0; VCE = −30 V; f = 1 MHz IC = −10 mA; VCE = −10 V; f = 100 MHz open base − − − − 50 − 60 −250 −300 −100 1.8 − 1.8 − pF MHz V V mA W open emitter − − −250 −300 V V CONDITIONS MIN. MAX. UNIT
1996 Dec 09
2
Philips Semiconductors
Product specification
PNP high-voltage transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF470 BF472 VCEO collector-emitter voltage BF470 BF472 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 114 °C open collector open base − − − − − − − PARAMETER collector-base voltage open emitter − − CONDITIONS
BF470; BF472
MIN.
MAX. −250 −300 −250 −300 −5 −50 −100 −50 1.8 +150 150 +150
UNIT V V V V V mA mA mA W °C °C °C
−65 − −65
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead minimum 10 × 10 mm. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain feedback capacitance transition frequency CONDITIONS IE = 0; VCB = −200 V IE = 0; VCB = −200 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −25 mA; VCE = −20 V IC = ic = 0; VCE = −30 V; f = 1 MHz − − − 50 − − MIN. MAX. −10 −10 −50 − −600 1.8 − mV pF MHz UNIT nA µA nA PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air; note 1 VALUE 100 20 UNIT K/W K/W
collector-emitter saturation voltage IC = −30 mA; IB = −5 mA
IC = −10 mA; VCE = −10 V; f = 100 MHz 60
1996 Dec 09
3
Philips Semiconductors
Product specification
PNP high-voltage transistors
PACKAGE OUTLINE
BF470; BF472
handbook, full pagewidth
2.7 max
7.8 max
3.75 3.2 3.0 11.1 max
2.54 max
(1)
1.2
15.3 min
1 0.