IXTP70N075T2

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA70N075T2 IXTP70N075T2 VDSS = ID25 = RDS(on) ≤ 75V 70A 12mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 IDM IAR EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Maximum Ratings 75 75 V V ± 20 V 70 A 180 A 40 A 300 mJ 150 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 2.5 g 3.0 g Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ±200 nA 2 μA 200 μA 10 12 mΩ G S TO-220 (IXTP) (TAB...