BLA6G1011-200R; BLA6G1011L(S)-200RG
Power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product pr...
BLA6G1011-200R; BLA6G1011L(S)-200RG
Power LDMOS
transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C.
Test signal
f
(MHz)
VDS PL
Gp
D tr
(V) (W) (dB) (%) (ns)
Typical RF performance in a class-AB production test circuit for SOT502A
pulsed RF
1030 to 1090 28 200 20
65 10
Typical RF performance in a Gullwing application for SOT502C and SOT502D
pulsed RF
1030 to 1090 28 200 20
65 15
tf (ns)
6
6
1.2 Features and benefits
Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA: Output power = 200 W Power gain = 20 dB Efficiency = 65 %
Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for b...