high-voltage transistors. BF472 Datasheet

BF472 transistors. Datasheet pdf. Equivalent

BF472 Datasheet
Recommendation BF472 Datasheet
Part BF472
Description PNP high-voltage transistors
Feature BF472; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF470; BF472 PNP high-voltage transistor.
Manufacture NXP
Datasheet
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NXP BF472
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BF470; BF472
PNP high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09



NXP BF472
Philips Semiconductors
PNP high-voltage transistors
Product specification
BF470; BF472
FEATURES
Low feedback capacitance.
APPLICATIONS
Class-B video output stages in television receivers and
for high-voltage IF output stages.
handbook, halfpage
2
3
DESCRIPTION
PNP transistors in a TO-126; SOT32 plastic package.
NPN complements: BF469 and BF471.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to mounting base
base
1
1 2 3 Top view
MAM272
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
ICM
Ptot
hFE
Cre
fT
PARAMETER
collector-base voltage
BF470
BF472
collector-emitter voltage
BF470
BF472
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
CONDITIONS
open emitter
open base
Tmb 114 °C
IC = 25 mA; VCE = 20 V
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
MIN.
50
60
MAX. UNIT
250
300
V
V
250
300
100
1.8
1.8
V
V
mA
W
pF
MHz
1996 Dec 09
2



NXP BF472
Philips Semiconductors
PNP high-voltage transistors
Product specification
BF470; BF472
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF470
BF472
collector-emitter voltage
BF470
BF472
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb 114 °C
MIN. MAX. UNIT
− −250 V
− −300 V
− −250 V
− −300 V
− −5 V
− −50 mA
− −100 mA
− −50 mA
1.8 W
65 +150 °C
150 °C
65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
in free air; note 1
thermal resistance from junction to mounting base
100 K/W
20 K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10 × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 25 mA; VCE = 20 V
IC = 30 mA; IB = 5 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
50
60
MAX.
10
10
50
600
1.8
UNIT
nA
µA
nA
mV
pF
MHz
1996 Dec 09
3





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