BLF182XR; BLF182XRS
Power LDMOS transistor
Rev. 3 — 3 February 2016
Product data sheet
1. Product profile
1.1 Genera...
BLF182XR; BLF182XRS
Power LDMOS
transistor
Rev. 3 — 3 February 2016
Product data sheet
1. Product profile
1.1 General description
A 250 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 81.36
VDS
PL
(V) (W)
50 250
50 235
Gp (dB) 28 28
D (%) 75 82
1.2 Features and benefits
Easy power control Integrated double sided ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications
BLF182XR; BLF182XRS
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin Description BLF182XR (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF182XRS ...
