BLL6G1214L-250

BLL6G1214L-250 LDMOS L-band radar power transistor Rev. 3 — 28 January 2016 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 1 ms;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 36 250 15 45 15 5 1.2 Features and benefits  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1.2 GHz to 1.4 GHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GH...