BLL9G1214L-600; BLL9G1214LS-600
LDMOS L-band radar power transistor
Rev. 1 — 27 November 2017
Product data sheet
1. Pr...
BLL9G1214L-600; BLL9G1214LS-600
LDMOS L-band radar power
transistor
Rev. 1 — 27 November 2017
Product data sheet
1. Product profile
1.1 General description
600 W LDMOS power
transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo test circuit.
Test signal
f
VDS
PL(3dB)
Gp
D
(GHz)
(V) (W)
(dB)
(%)
pulsed RF
1.2 to 1.4
32 600
19 60
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for L-band operation Excellent thermal stability Easy power control Integrated dual sided ESD protection enables excellent off-state isolation High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
L-band radar applications in the fre...
