BLP05H635XR; BLP05H635XRG
Power LDMOS transistor
Rev. 4 — 21 September 2016
Product data sheet
1. Product profile
1....
BLP05H635XR; BLP05H635XRG
Power LDMOS
transistor
Rev. 4 — 21 September 2016
Product data sheet
1. Product profile
1.1 General description
A 35 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 63.86
127.72
VDS
PL
(V) (W)
50 35
50 35
50 35
Gp (dB) 27 29.4 26.8
D (%) 75 75.6 75.7
1.2 Features and benefits
Easy power control Integrated double sided ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications
BLP05H635XR; BLP05H635XRG
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin Description BLP05H635XR (SOT1223-2) 1 gate 2 ...