high-voltage transistors. BF487 Datasheet

BF487 transistors. Datasheet pdf. Equivalent

BF487 Datasheet
Recommendation BF487 Datasheet
Part BF487
Description NPN high-voltage transistors
Feature BF487; DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF483; BF485; BF487 NPN high-voltage tra.
Manufacture NXP
Datasheet
Download BF487 Datasheet





NXP BF487
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BF483; BF485; BF487
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 12



NXP BF487
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF483; BF485; BF487
FEATURES
Low feedback capacitance.
APPLICATIONS
Intended for use in video output stages in
black-and-white and in colour television receivers.
DESCRIPTION
NPN transistors in a TO-92 plastic package.
PNP complement: BF488
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM259
2
3
Fig.1 Simplified outline (TO-92) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BF483
BF485
BF487
collector-emitter voltage
BF483
BF485
BF487
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on a printed-circuit board.
MIN.
MAX.
UNIT
300 V
350 V
400 V
250 V
300 V
350 V
5V
100 mA
200 mA
100 mA
830 mW
65
+150
°C
150 °C
65
+150
°C
1999 Apr 12
2



NXP BF487
Philips Semiconductors
NPN high-voltage transistors
Product specification
BF483; BF485; BF487
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on a printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO emitter cut-off current
hFE DC current gain
VCEsat
Cre
fT
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = 300 V
IE = 0; VCB = 250 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 25 mA; VCE = 20 V
IC = 40 mA; VCE = 20 V
IC = 30 mA; IB = 5 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
50
20
70
MAX.
20
20
100
600
1.4
110
UNIT
nA
µA
nA
mV
pF
MHz
1999 Apr 12
3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)