BLP10H660PG

BLP10H660P; BLP10H660PG Power LDMOS transistor Rev. 1 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 720 VDS PL (V) (W) 50 60 Gp (dB) 18 D (%) 72 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1000 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications BLP10H660P; BLP10H660PG Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLP10H660P (SOT1223-2) 1 gate 2 2 gate ...