BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 ...
BLS6G2731-6G
LDMOS S-Band radar power
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power
transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit.
Mode of operation
f (GHz)
VDS PL (V) (W)
Gp D (dB) (%)
tr (ns)
tf (ns)
pulsed RF
2.7 to 3.1 32
6
15 33
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. You must use a ground strap or touch the PC case or other grounded source before unpacking or handling the hardware.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 s and a of 10 %: Output power = 6 W Power gain = 15 dB Efficiency = 3...
