BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1....
BLS6G2933S-130
LDMOS S-band radar power
transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power
transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation
f (GHz)
VDS PL (V) (W)
Gp D (dB) (%)
tr (ns)
tf (ns)
pulsed RF
2.9 to 3.3 32
130
12.5 47
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 %
Easy power control Integrated ESD protection High flexibility with respect to pulse forma...
