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BLS6G3135-120 Dataheets PDF



Part Number BLS6G3135-120
Manufacturers Ampleon
Logo Ampleon
Description LDMOS S-Band radar power transistor
Datasheet BLS6G3135-120 DatasheetBLS6G3135-120 Datasheet (PDF)

BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 to 3.

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BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 to 3.5 32 120 11 43 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 s with  of 10 %:  Output power = 120 W  Gain = 11 dB  Efficiency = 43 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency .


BLS6G3135S-20 BLS6G3135-120 BLS6G3135S-120


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